VISHAY SI3443CDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3443CDV-T1-GE3

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Specifications

Gate Charge(Qg)11.3nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)5.97A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)100mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)610pF
TypeP-Channel

Technical details

P-Channel 20V 5.97A 3.2W Surface Mount TSOP-6

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