VISHAY SI3443BDV-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI3443BDV-T1-BE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)-
Current - Continuous Drain(Id)4.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation700mW
RDS(on)60mΩ@4.5V
Number1 P-Channel

Technical details

20V 4.7A 600mV 700mW 60mΩ@4.5V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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