VISHAY SI3438DV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3438DV-T1-GE3

No reviews yet — be the first to review VISHAY SI3438DV-T1-GE3.

Specifications

Gate Charge(Qg)11.7nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)73pF
Current - Continuous Drain(Id)7.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)29.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)640pF
TypeN-Channel

Technical details

40V 7.4A 2.2W Surface Mount TSOP-6

Related FETs & Power MOSFETs