VISHAY SI3437DV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3437DV-T1-GE3

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)750mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)510pF
TypeP-Channel

Technical details

P-Channel 150V 1.4A 3.2W Surface Mount TSOP-6

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