VISHAY · FETs & Power MOSFETs · MPN SI3437DV-T1-BE3
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 1.1A;1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2W;3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 510pF |
150V 750mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS