VISHAY SI3433CDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3433CDV-T1-GE3

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Specifications

Gate Charge(Qg)18nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
TypeP-Channel

Technical details

P-Channel 20V 6A 1.6W Surface Mount TSOP-6

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