VISHAY SI3433CDV-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI3433CDV-T1-E3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF

Technical details

20V 6A 1.6W 38mΩ@4.5V 1 P-Channel SOT-23-6 Single FETs, MOSFETs RoHS

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