VISHAY SI3433CDV-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI3433CDV-T1-BE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)-
Current - Continuous Drain(Id)5.2A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.6W;3.3W
RDS(on)38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF

Technical details

20V 400mV 38mΩ@4.5V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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