VISHAY · FETs & Power MOSFETs · MPN SI3430DV-T1-E3
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| Gate Charge(Qg) | 5.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
100V 2.4A 4.2V 1 N-channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS