VISHAY SI3424CDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3424CDV-T1-GE3

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)405pF
TypeN-Channel

Technical details

30V 8A 2.5V 3.6W 21mΩ@10V 1 N-channel N-Channel TSOP-6 Single FETs, MOSFETs RoHS

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