VISHAY · FETs & Power MOSFETs · MPN SI3417DV-T1-GE3
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| Gate Charge(Qg) | 15nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 7.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 25.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.35nF |
30V 7.3A 2W Surface Mount TSOP-6