VISHAY · FETs & Power MOSFETs · MPN SI3410DV-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 170pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF |
| RDS(on) | 23mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.295nF |
| Type | N-Channel |
30V 8A 3V 4.1W 23mΩ@4.5V 1 N-channel N-Channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS