VISHAY · FETs & Power MOSFETs · MPN SI3407DV-T1-GE3
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 335pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 4.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 284pF |
| RDS(on) | 24mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.67nF |
| Type | P-Channel |
P-Channel 20V 8A 4.2W Surface Mount TSOP-6