VISHAY · FETs & Power MOSFETs · MPN SI2399DS-T1-BE3
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5.1A;6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.25W;2.5W |
| RDS(on) | 34mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 835pF |
20V 600mV 34mΩ@10V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS