VISHAY SI2393DS-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI2393DS-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.2nC@10V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)22.7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)980pF
TypeP-Channel

Technical details

P-Channel 30V 7.5A 1.6W Surface Mount SOT-23

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