VISHAY · FETs & Power MOSFETs · MPN SI2392BDS-T1-GE3
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| Gate Charge(Qg) | 3.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 26pF |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 180mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 290pF |
| Type | N-Channel |
N-Channel 100V 2.3A 1.7W Surface Mount SOT-23