VISHAY · FETs & Power MOSFETs · MPN SI2387DS-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 10.2nC@10V |
| Output Capacitance(Coss) | 155pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 242mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 395pF |
| Type | P-Channel |
80V 3A 2.5V 2.5W 242mΩ@4.5V 1 P-Channel P-Channel SOT-23-3(TO-236-3) Single FETs, MOSFETs RoHS