VISHAY · FETs & Power MOSFETs · MPN SI2371EDS-T1-GE3
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| Gate Charge(Qg) | 10.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 45mΩ@10V |
| Number | 1 P-Channel |
| Vgs | ±12V |
| Type | P-Channel |
P-Channel 30V 4.8A 1.1W Surface Mount SOT-23