VISHAY · FETs & Power MOSFETs · MPN SI2371EDS-T1-BE3
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| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | 1W;1.7W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 3.7A;4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 45mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
30V 600mV 45mΩ@10V 1 P-Channel P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS