VISHAY · FETs & Power MOSFETs · MPN SI2369DS-T1-BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 5.4A;7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.25W;2.5W |
| RDS(on) | 29mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.295nF |
30V 1.2V 29mΩ@10V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS