VISHAY · FETs & Power MOSFETs · MPN SI2369BDS-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6.2nC@10V |
| Current - Continuous Drain(Id) | 5.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 27mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 745pF |
P-Channel 30V 5.6A 1.3W Surface Mount SOT-23