VISHAY · FETs & Power MOSFETs · MPN SI2367DS-T1-GE3
No reviews yet — be the first to review VISHAY SI2367DS-T1-GE3.
| Gate Charge(Qg) | 23nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 112pF |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 960mW;1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF |
| RDS(on) | 66mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 561pF |
| Type | P-Channel |
P-Channel 20V 3.8A 960mW 1.7W Surface Mount SOT-23-3