VISHAY · FETs & Power MOSFETs · MPN SI2367DS-T1-BE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 23nC@8V |
| Current - Continuous Drain(Id) | 2.8A;3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 960mW;1.7W |
| RDS(on) | 66mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 561pF |
20V 400mV 66mΩ@4.5V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS