VISHAY · FETs & Power MOSFETs · MPN SI2366DS-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.1W |
| RDS(on) | 42mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 335pF |
| Type | N-Channel |
30V 5.8A 2.5V 2.1W 42mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS