VISHAY · FETs & Power MOSFETs · MPN SI2366DS-T1-BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Current - Continuous Drain(Id) | 4.5A;5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.25W;2.1W |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 335pF |
30V 2.5V 36mΩ@10V 1 N-channel SOT-23(TO-236) Single FETs, MOSFETs RoHS