VISHAY · FETs & Power MOSFETs · MPN SI2365EDS-T1-GE3
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| Gate Charge(Qg) | 13.8nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
P-Channel 20V 5.9A 1.1W Surface Mount SOT-23-3