VISHAY · FETs & Power MOSFETs · MPN SI2356DS-T1-GE3
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| Gate Charge(Qg) | 3.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 960mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 70mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 370pF |
N-Channel 40V 4.3A 0.96W Surface Mount SOT-23