VISHAY · FETs & Power MOSFETs · MPN SI2356DS-T1-BE3
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 3.2A;4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 960mW;1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 51mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 370pF |
40V 1.5V 51mΩ@10V 1 N-channel SOT-23(TO-236) Single FETs, MOSFETs RoHS