VISHAY SI2347DS-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI2347DS-T1-GE3

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)93pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)68mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)705pF
TypeP-Channel

Technical details

P-Channel 30V 5A 1.7W Surface Mount SOT-23

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