VISHAY · FETs & Power MOSFETs · MPN SI2347DS-T1-BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 3.8A;5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.2W;1.7W |
| RDS(on) | 42mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 705pF |
30V 1V 42mΩ@10V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS