VISHAY · FETs & Power MOSFETs · MPN SI2343DS-T1-GE3
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 131pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 86mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 540pF |
| Type | P-Channel |
30V 4A 3V 1.25W 86mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS