VISHAY SI2343DS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2343DS-T1-BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation750mW
RDS(on)53mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)540pF

Technical details

30V 3.1A 3V 750mW 53mΩ@10V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS

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