VISHAY SI2343CDS-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI2343CDS-T1-GE3

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Specifications

Gate Charge(Qg)21nC
Drain to Source Voltage30V
Output Capacitance(Coss)131pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)53mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)540pF
TypeP-Channel

Technical details

P-Channel 30V 4A 0.8W Surface Mount SOT-23

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