VISHAY · FETs & Power MOSFETs · MPN SI2342DS-T1-BE3
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| Drain to Source Voltage | 8V |
|---|---|
| Gate Charge(Qg) | 15.8nC@4.5V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.3W;2.5W |
| RDS(on) | 17mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.07nF |
8V 6A 800mV 17mΩ@4.5V 1 N-channel SOT-23(TO-236) Single FETs, MOSFETs RoHS