VISHAY SI2338DS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2338DS-T1-BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)4.2nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)424pF
TypeN-Channel

Technical details

N-Channel 30V 5.5A 1.6W Surface Mount SOT-23(TO-236)

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