VISHAY · FETs & Power MOSFETs · MPN SI2337DS-T1-GE3
No reviews yet — be the first to review VISHAY SI2337DS-T1-GE3.
| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 760mW;2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 270mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
| Type | P-Channel |
P-Channel 80V 2.2A 760mW 2.5W Surface Mount SOT-23