VISHAY · FETs & Power MOSFETs · MPN SI2337DS-T1-E3
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| Gate Charge(Qg) | 11nC@40V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 760mW |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 270mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
P-Channel 80V 1.2A 0.76W Surface Mount SOT-23