VISHAY · FETs & Power MOSFETs · MPN SI2337DS-T1-BE3
No reviews yet — be the first to review VISHAY SI2337DS-T1-BE3.
| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 760mW |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 270mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
80V 2.2A 760mW 270mΩ@10V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS