VISHAY · FETs & Power MOSFETs · MPN SI2336DS-T1-GE3
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| Gate Charge(Qg) | 5.7nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 42mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 560pF |
| Type | N-Channel |
N-Channel 30V 5.2A 1.25W Surface Mount SOT-23