VISHAY · FETs & Power MOSFETs · MPN SI2333DS-T1-BE3
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 18nC@4.5V |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 750mW |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
12V 4.1A 1V 750mW 32mΩ@4.5V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS