VISHAY · FETs & Power MOSFETs · MPN SI2333DDS-T1-BE3
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 1.2W;1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 236pF |
| RDS(on) | 28mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.275nF |
12V 400mV 28mΩ@4.5V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS