VISHAY SI2333CDS-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI2333CDS-T1-E3

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)315pF
Current - Continuous Drain(Id)7.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)59mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.225nF
TypeP-Channel

Technical details

P-Channel 12V 7.1A 2.5W Surface Mount SOT-23

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