VISHAY · FETs & Power MOSFETs · MPN SI2329DS-T1-GE3
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| Gate Charge(Qg) | 29nC@4.5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.485nF |
P-Channel 8V 6A 2.5W Surface Mount SOT-23