VISHAY · FETs & Power MOSFETs · MPN SI2328DS-T1-GE3
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| Gate Charge(Qg) | 5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 250pF |
100V 1.5A 4V 1.25W 250mΩ@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS