VISHAY · FETs & Power MOSFETs · MPN SI2325DS-T1-GE3
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| Gate Charge(Qg) | 7.7nC@75V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 30pF |
| Current - Continuous Drain(Id) | 690mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 750mW |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 510pF |
| Type | P-Channel |
P-Channel 150V 0.69A 0.75W Surface Mount SOT-23