VISHAY · FETs & Power MOSFETs · MPN SI2325DS-T1-E3
No reviews yet — be the first to review VISHAY SI2325DS-T1-E3.
| Gate Charge(Qg) | 7.7nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 690mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.3Ω@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 510pF |
| Type | P-Channel |
P-Channel 150V 0.69A 1.25W Surface Mount SOT-23