VISHAY · FETs & Power MOSFETs · MPN SI2323DS-T1-E3
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| Gate Charge(Qg) | 19nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 191pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 68mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.02nF |
| Type | P-Channel |
P-Channel 20V 4.7A 1.25W Surface Mount SOT-23