VISHAY · FETs & Power MOSFETs · MPN Si2323DDS-T1-GE3
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| Gate Charge(Qg) | 21nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 135pF |
| Current - Continuous Drain(Id) | 5.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 75mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.16nF |
| Type | P-Channel |
P-Channel 20V 5.3A 1.7W Surface Mount SOT-23