VISHAY SI2323CDS-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI2323CDS-T1-GE3

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W;2.5W
RDS(on)39mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.09nF

Technical details

P-Channel 20V 6A 1.25W 2.5W Surface Mount SOT-23

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