VISHAY SI2323CDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2323CDS-T1-BE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)25nC@4.5V
Current - Continuous Drain(Id)4.6A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.25W;2.5W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)39mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.09nF

Technical details

20V 400mV 39mΩ@4.5V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS

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